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p‐Type Semiconducting GeSe Combs by a Vaporization–Condensation–Recrystallization (VCR) Process
Author(s) -
Yoon Seok Min,
Song Hyun Jae,
Choi Hee Cheul
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200903719
Subject(s) - recrystallization (geology) , materials science , vaporization , condensation , semiconductor , optoelectronics , crystallography , thermodynamics , physics , paleontology , chemistry , biology
Novel p‐type semiconductors can be found in these extraordinary comb structures. The GeSe combs are selectively formed by a vaporization–condensation–recrystallization (VCR) process using bulk GeSe powder as the precursor source. They have a flat body plate part and extended wire finger parts, both of which have identical crystal structures. The GeSe comb field‐effect transistor device displays both p‐type semiconducting and photo‐switching behavior.