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Chemically Derived Graphene Oxide: Towards Large‐Area Thin‐Film Electronics and Optoelectronics
Author(s) -
Eda Goki,
Chhowalla Manish
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200903689
Subject(s) - graphene , materials science , thin film , exfoliation joint , nanotechnology , oxide , graphite , electronics , graphite oxide , optoelectronics , composite material , chemistry , metallurgy
Chemically derived graphene oxide (GO) possesses a unique set of properties arising from oxygen functional groups that are introduced during chemical exfoliation of graphite. Large‐area thin‐film deposition of GO, enabled by its solubility in a variety of solvents, offers a route towards GO‐based thin‐film electronics and optoelectronics. The electrical and optical properties of GO are strongly dependent on its chemical and atomic structure and are tunable over a wide range via chemical engineering. In this Review, the fundamental structure and properties of GO‐based thin films are discussed in relation to their potential applications in electronics and optoelectronics.