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Ambipolar Memory Devices Based on Reduced Graphene Oxide and Nanoparticles
Author(s) -
Myung Sung,
Park Jaesung,
Lee Hyungwoo,
Kim Kwang S.,
Hong Seunghun
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200903267
Subject(s) - ambipolar diffusion , materials science , graphene , microfabrication , oxide , nanoparticle , nanotechnology , non volatile memory , optoelectronics , fabrication , physics , quantum mechanics , metallurgy , medicine , plasma , alternative medicine , pathology
A directed‐assembly method on the basis of graphene oxide (GO) pieces is developed, which allowed us to mass‐produce a uniform array of graphene‐based ambipolar memory devices using only conventional microfabrication facilities. Significantly, we successfully demonstrated that this device can be operated as both conventional conductivity‐switching memory and new type‐switching memory by adjusting the charge density on the nanoparticles.