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Light‐Induced Bipolar‐Resistance Effect Based on Metal–Oxide–Semiconductor Structures of Ti/SiO 2 /Si
Author(s) -
Yu Chongqi,
Wang Hui
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200903070
Subject(s) - materials science , laser , optoelectronics , semiconductor , oxide , metal , silicon , composite material , metallurgy , optics , physics
A novel approach to the control of resistance in a Ti/SiO 2 /Si structure is demonstrated by use of a laser via a phenomenon referred to as the bipolar‐resistance effect (BRE). The most significant features of this BRE are an excellent spatial sensitivity and a large change ratio in resistance as the laser moves along the surface of the structure.
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