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Flexible Low‐Voltage Organic Transistors and Circuits Based on a High‐Mobility Organic Semiconductor with Good Air Stability
Author(s) -
Zschieschang Ute,
Ante Frederik,
Yamamoto Tatsuya,
Takimiya Kazuo,
Kuwabara Hirokazu,
Ikeda Masaaki,
Sekitani Tsuyoshi,
Someya Takao,
Kern Klaus,
Klauk Hagen
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200902740
Subject(s) - transistor , materials science , organic semiconductor , semiconductor , electronic circuit , optoelectronics , stability (learning theory) , electronics , voltage , computer science , electrical engineering , engineering , machine learning
Flexible transistors and circuits based on dinaphtho‐[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm 2 V −1 s −1 and the ring oscillators have a stage delay of 18 µs. Due to the excellent stability of the semiconductor, the devices and circuits maintain 50% of their initial performance for a period of 8 months in ambient air.