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Solution‐Processable Carbon Nanotubes for Semiconducting Thin‐Film Transistor Devices
Author(s) -
Lee Chun Wei,
Han Xuanding,
Chen Fuming,
Wei Jun,
Chen Yuan,
ChanPark Mary B.,
Li LainJong
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200902461
Subject(s) - materials science , carbon nanotube , nanotechnology , transistor , thin film transistor , electronics , semiconductor , field effect transistor , carbon fibers , flexible electronics , impurity , electron mobility , optoelectronics , composite material , electrical engineering , voltage , organic chemistry , layer (electronics) , chemistry , composite number , engineering
CoMoCat single‐walled carbon nanotubes (SWNTs) treated with diazonium salts can be used to fabricate solution‐processable field‐effect transistors (FETs) with a full semiconductor device yield. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm 2 V −1 s −1 while keeping the on–off ratio higher than 5000. The removal of impurities is essential to achieve high‐on–off‐ratio devices. This approach is promising for preparation of SWNT inks for printing high‐performance devices in flexible electronics.