Premium
Role of Gallium Doping in Dramatically Lowering Amorphous‐Oxide Processing Temperatures for Solution‐Derived Indium Zinc Oxide Thin‐Film Transistors
Author(s) -
Jeong Sunho,
Ha YoungGeun,
Moon Jooho,
Facchetti Antonio,
Marks Tobin J.
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200902450
Subject(s) - materials science , thin film transistor , indium , doping , annealing (glass) , amorphous solid , oxide , zinc , thin film , transistor , optoelectronics , nanotechnology , metallurgy , crystallography , electrical engineering , chemistry , engineering , layer (electronics) , voltage
Ga doping in indium zinc oxide (IZO)‐based amorphous‐oxide semiconductors (AOSs) promotes the formation of oxide‐lattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin‐film‐transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required for solution‐processed, low‐temperature‐annealed AOSs.