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Influence of Device Geometry on Sensor Characteristics of Planar Organic Electrochemical Transistors
Author(s) -
Cicoira Fabio,
Sessolo Michele,
Yaghmazadeh Omid,
DeFranco John A.,
Yang Sang Yoon,
Malliaras George G.
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200902329
Subject(s) - materials science , pedot:pss , planar , transistor , sensitivity (control systems) , electrode , electrochemistry , optoelectronics , channel (broadcasting) , signal (programming language) , nanotechnology , voltage , electrical engineering , electronic engineering , chemistry , computer graphics (images) , engineering , computer science , layer (electronics) , programming language
The response of PEDOT:PSS planar electrochemical transistors to H 2 O 2 can be tuned by varying the ratio between the areas of the channel and the gate electrode. Devices with small gates show lower background signal and higher sensitivity. The detection range, on the other hand, is found to be rather independent of the gate/channel area ratio.