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Microstructural Origin of High Mobility in High‐Performance Poly(thieno‐thiophene) Thin‐Film Transistors
Author(s) -
Wang Chenchen,
Jimison Leslie H.,
Goris Ludwig,
McCulloch Iain,
Heeney Martin,
Ziegler Alexander,
Salleo Alberto
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200902303
Subject(s) - materials science , thin film transistor , transmission electron microscopy , crystallite , characterization (materials science) , enhanced data rates for gsm evolution , electron mobility , transistor , nanometre , thin film , thiophene , optoelectronics , nanotechnology , composite material , electrical engineering , metallurgy , organic chemistry , telecommunications , chemistry , engineering , layer (electronics) , voltage , computer science
High‐mobility PBTTT thin‐film transistors are modeled with a mobility edge model and compared with P3HT. Their improved performance is not due to a low trap density but rather due to high mobility in the crystallites. Characterization of delaminated films with transmission electron microscopy and atomic force microscopy indicates terraces that are composed of nanometer‐scale features (see figure).