Electronic‐Field Control of Two‐Dimensional Electrons in Polymer‐Gated–Oxide Semiconductor Heterostructures | Zendy

Nakano Masaki | Zendy; Tsukazaki Atsushi | Zendy; Ohtomo Akira | Zendy; Ueno Kazunori | Zendy; Akasaka Shunsuke | Zendy; Yuji Hiroyuki | Zendy; Nakahara Ken | Zendy; Fukumura Tomoteru | Zendy; Kawasaki Masashi | Zendy

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Electronic‐Field Control of Two‐Dimensional Electrons in Polymer‐Gated–Oxide Semiconductor Heterostructures

Author(s) -

Nakano Masaki,

Tsukazaki Atsushi,

Ohtomo Akira,

Ueno Kazunori,

Akasaka Shunsuke,

Yuji Hiroyuki,

Nakahara Ken,

Fukumura Tomoteru,

Kawasaki Masashi

Publication year - 2010

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200902162

Subject(s) - materials science , heterojunction , interface (matter) , schottky barrier , oxide , pedot:pss , optoelectronics , semiconductor , transistor , field effect transistor , nanotechnology , field effect , electrical engineering , voltage , engineering , capillary number , capillary action , composite material , layer (electronics) , diode , metallurgy

A defect‐free and electronically abrupt polymer/oxide interface can be achieved by spin‐coating of PEDOT:PSS on ZnO‐based heterostructures. The interface yielding Schottky contact leads to the successful modulation of quantum 2D transport in MgZnO/ZnO interfaces via the electric‐field effect, which indicates that the polymer/oxide interface enables a high‐mobility field‐effect transistor.

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