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Electronic‐Field Control of Two‐Dimensional Electrons in Polymer‐Gated–Oxide Semiconductor Heterostructures
Author(s) -
Nakano Masaki,
Tsukazaki Atsushi,
Ohtomo Akira,
Ueno Kazunori,
Akasaka Shunsuke,
Yuji Hiroyuki,
Nakahara Ken,
Fukumura Tomoteru,
Kawasaki Masashi
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200902162
Subject(s) - materials science , heterojunction , interface (matter) , schottky barrier , oxide , pedot:pss , optoelectronics , semiconductor , transistor , field effect transistor , nanotechnology , field effect , electrical engineering , voltage , engineering , capillary number , capillary action , composite material , layer (electronics) , diode , metallurgy
A defect‐free and electronically abrupt polymer/oxide interface can be achieved by spin‐coating of PEDOT:PSS on ZnO‐based heterostructures. The interface yielding Schottky contact leads to the successful modulation of quantum 2D transport in MgZnO/ZnO interfaces via the electric‐field effect, which indicates that the polymer/oxide interface enables a high‐mobility field‐effect transistor.