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Nanometer‐Thick Single‐Crystal Hexagonal Gd 2 O 3 on GaN for Advanced Complementary Metal‐Oxide‐Semiconductor Technology
Author(s) -
Chang Wen Hsin,
Lee Chih Hsun,
Chang Yao Chung,
Chang Pen,
Huang Mao Lin,
Lee Yi Jun,
Hsu ChiaHung,
Hong J. Minghuang,
Tsai Chiung Chi,
Kwo J. Raynien,
Hong Minghwei
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200902101
Subject(s) - materials science , hexagonal crystal system , nanometre , semiconductor , oxide , nanotechnology , metal , crystal (programming language) , single crystal , optoelectronics , crystallography , metallurgy , composite material , chemistry , computer science , programming language
Hexagonal‐phase single‐crystal Gd 2 O 3 is deposited on GaN in a molecular beam epitaxy system (see image). The dielectric constant is about twice that of its cubic counterpart when deposited on InGaAs or Si. The capacitive effective thickness of 0.5 nm in hexagonal Gd 2 O 3 is perhaps the lowest on GaN‐metal‐oxide‐semiconductor devices. The heterostructure is thermo dynamically stable at high temperatures and exhibits low interfacial densities of states after high‐temperature annealing.