Low‐Voltage Ring Oscillators Based on Polyelectrolyte‐Gated Polymer Thin‐Film Transistors
Author(s) -
Herlogsson Lars,
Cölle Michael,
Tierney Steven,
Crispin Xavier,
Berggren Magnus
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200901850
Subject(s) - materials science , transistor , thin film transistor , capacitance , optoelectronics , polyelectrolyte , electrolyte , polymer , ring oscillator , threshold voltage , voltage , insulator (electricity) , low voltage , nanotechnology , layer (electronics) , electrical engineering , electrode , cmos , composite material , chemistry , engineering
A polyanionic electrolyte is used as gate insulator in top‐gate p ‐channel polymer thin‐film transistors. The high capacitance of the polyelectrolyte film allows the transistors and integrated circuits to operate below 1.5 V. Seven‐stage ring oscillators that operate at supply voltages down to 0.9 V and exhibit signal propagation delays as low as 300 µs per stage are reported.