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High‐mobility Ambipolar Transistors and High‐gain Inverters from a Donor–Acceptor Copolymer Semiconductor
Author(s) -
Kim Felix Sunjoo,
Guo Xugang,
Watson Mark D.,
Jenekhe Samson A.
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200901819
Subject(s) - ambipolar diffusion , transistor , materials science , copolymer , acceptor , semiconductor , optoelectronics , electron mobility , thin film transistor , organic semiconductor , nanotechnology , electron , electrical engineering , polymer , voltage , physics , condensed matter physics , engineering , quantum mechanics , composite material , layer (electronics)
High‐performance ambipolar transistors and inverters are demonstrated using a new donor–acceptor copolymer semiconductor. The ambipolar transistors show electron and hole mobilities of up to 0.04 and 0.003 cm 2 V −1 s −1 , respectively. Voltage transfer curves of the inverters made on common gold electrodes showed sharp switching with gain of 30.