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Impact of Defect Distribution on Resistive Switching Characteristics of Sr 2 TiO 4 Thin Films
Author(s) -
Shibuya Keisuke,
Dittmann Regina,
Mi Shaobo,
Waser Rainer
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200901493
Subject(s) - materials science , thin film , hysteresis , resistive touchscreen , oxide , microstructure , work (physics) , optoelectronics , nanotechnology , condensed matter physics , computer science , composite material , metallurgy , thermodynamics , physics , computer vision
The resistive switching properties of Sr 2 TiO 4 thin films with specific defect distribution have been studied. Junctions of Sr 2 TiO 4 thin films containing a high density of defects show well‐pronounced resistive switching properties while those with well‐ordered microstructure exhibited insignificant hysteresis windows. This work clearly demonstrates the crucial role of defects for the microscopic switching mechanisms in oxide thin films.