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Fullerene Sensitized Silicon for Near‐ to Mid‐Infrared Light Detection
Author(s) -
Matt Gebhard J.,
Fromherz Thomas,
Bednorz Mateusz,
Zamiri Saeid,
Goncalves Guillaume,
Lungenschmied Christoph,
Meissner Dieter,
Sitter Helmut,
Sariciftci N. Serdar,
Brabec Christoph J.,
Bauer Günther
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200901383
Subject(s) - materials science , fullerene , photocurrent , silicon , heterojunction , optoelectronics , infrared , semiconductor , derivative (finance) , absorption (acoustics) , nanotechnology , optics , chemistry , organic chemistry , physics , financial economics , economics , composite material
A novel light‐sensing scheme based on a silicon/fullerene‐derivative heterojunction allows optoelectronic detection in the near‐ to mid‐infrared (IR), which is fully compatible with complementary metal oxide semiconductor (CMOS) technology. Although silicon and the fullerene derivative do not absorb in the IR, a heterojunction of these materials absorbs and generates a photocurrent (PC) in the near‐ to mid‐IR, presumably caused by an interfacial absorption mechanism.