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Synthesis, Structure, and Properties of Boron‐ and Nitrogen‐Doped Graphene
Author(s) -
Panchakarla L. S.,
Subrahmanyam K. S.,
Saha S. K.,
Govindaraj Achutharao,
Krishnamurthy H. R.,
Waghmare U. V.,
Rao C. N. R.
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200901285
Subject(s) - materials science , nanodiamond , graphene , raman spectroscopy , boron , doping , nitrogen , nanotechnology , carbon fibers , optoelectronics , diamond , composite material , composite number , optics , organic chemistry , chemistry , physics
Boron‐ and nitrogen‐doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier‐concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G‐band mode and intensification of the defect‐related D‐band in the Raman spectra are also observed.