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The Spatial Distribution of Threading Dislocations in Gallium Nitride Films
Author(s) -
Moram Michelle A.,
Oliver Rachel A.,
Kappers Menno J.,
Humphreys Colin J.
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200901095
Subject(s) - materials science , coalescence (physics) , dislocation , threading (protein sequence) , spatial distribution , partial dislocations , gallium nitride , condensed matter physics , crystallography , nanotechnology , composite material , statistics , physics , chemistry , astrobiology , mathematics , nuclear magnetic resonance , layer (electronics) , protein structure
Spatial analysis techniques are used to study threading dislocations (TDs) at the surfaces of a wide range of GaN films. In all films, the dislocation positions are consistent with a spatially random TD generation process followed by movement of dislocations, but are inconsistent with the spatial distribution of dislocations expected at island coalescence boundaries.