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Majority Carrier Type Conversion with Floating Gates in Carbon Nanotube Transistors
Author(s) -
Yu Woo Jong,
Kang Bo Ram,
Lee Il Ha,
Min YoSep,
Lee Young Hee
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200900911
Subject(s) - materials science , carbon nanotube field effect transistor , carbon nanotube , polarity (international relations) , transistor , nanotechnology , trapping , field effect transistor , optoelectronics , versa , carbon nanotube quantum dot , nanotube , electrical engineering , voltage , computer science , ecology , database , biology , cell , engineering , genetics
A charge trapping layer can serve not only for designing multilevel nonvolatile memory but also for type conversion from p‐ to n‐type and vice versa of carbon nanotube (CNT) channels. Type conversion from p‐ to n‐type and vice versa for CNT field effect transistors can be realized by changing the polarity of trapped charges (see figure).