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Interface Atomic‐Scale Structure and its Impact on Quantum Electron Transport
Author(s) -
Wang Zhongchang,
Saito Mitsuhiro,
Tsukimoto Susumu,
Ikuhara Yuichi
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200900877
Subject(s) - ohmic contact , materials science , atomic units , scanning transmission electron microscopy , density functional theory , schottky barrier , interface (matter) , transmission electron microscopy , scanning tunneling microscope , nanotechnology , chemical physics , layer (electronics) , condensed matter physics , optoelectronics , computational chemistry , composite material , contact angle , chemistry , physics , quantum mechanics , diode , sessile drop technique
Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/Ti 3 SiC 2 interface in Ohmic contact to p‐type SiC (see image), which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.
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