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Vertical Transistor with Ultrathin Silicon Nitride Gate Dielectric
Author(s) -
Moradi Maryam,
Nathan Arokia,
Haverinen Hanna M.,
Jabbour Ghassan E.
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200900757
Subject(s) - materials science , silicon nitride , gate dielectric , optoelectronics , transistor , dielectric , active matrix , nitride , thin film transistor , nanoscopic scale , silicon , gate oxide , nanotechnology , layer (electronics) , electrical engineering , voltage , engineering
Nanoscale vertical thin‐film transistors (VTFTs) are fabricated employing a new ultrathin silicon nitride (SiN x ) gate dielectric for applications in high‐resolution active matrix flat panel electronics. Illustrated are the cross‐section schematic and SEM image of a 500 nm channel length VTFT with a 50 nm thick SiN x gate dielectric. The device demonstrates excellent gate control with gate leakage as low as 0.1 nA cm −2 .
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