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A Characterization Study of a Nanowire‐Network Transistor with Various Channel Layers
Author(s) -
Jang Jae Eun,
Cha Seung Nam,
Butler Tim P.,
Sohn Jung In,
Kim Jung Woo,
Jin Young Wan,
Amaratunga Gehan A. J.,
Jung Jae Eun,
Kim Jong Min
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200900697
Subject(s) - materials science , nanowire , characterization (materials science) , channel (broadcasting) , field effect transistor , optoelectronics , transistor , distortion (music) , layer (electronics) , nanotechnology , electrical engineering , voltage , telecommunications , computer science , amplifier , engineering , cmos
The performance of a ZnO network transistor is studied by means of the change in threshold slope with varying number of nanowire channel layers. The threshold slope broadens as the number of layers in the channel increases and, in the case of a two‐layer channel, a double turn‐on effect can be observed. The gate‐field simulation shows gate‐field distortion by the surface of the nanowire.