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The Role of the Oxygen/Water Redox Couple in Suppressing Electron Conduction in Field‐Effect Transistors
Author(s) -
Aguirre Carla M.,
Levesque Pierre L.,
Paillet Matthieu,
Lapointe François,
StAntoine Benoit C.,
Desjardins Patrick,
Martel Richard
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200900550
Subject(s) - materials science , thermal conduction , transistor , oxygen , carbon nanotube , redox , electron , conduction electron , field effect transistor , electron transfer , electrochemistry , nanoscopic scale , chemical physics , nanotechnology , thin film transistor , layer (electronics) , optoelectronics , electrode , photochemistry , voltage , electrical engineering , chemistry , composite material , physics , organic chemistry , quantum mechanics , metallurgy , engineering
The suppression of electron (n‐type) conduction observed in back‐gated field effect transistors is the result of an electrochemical charge transfer process to the oxygen/water layer adsorbed on hydrophilic substrates. The impact of this phenomenon is demonstrated with nanoscale and thin‐film carbon nanotube transistors.