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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Author(s) -
Waser Rainer,
Dittmann Regina,
Staikov Georgi,
Szot Kristof
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200900375
Subject(s) - materials science , nanotechnology , mechanism (biology) , scaling , valence (chemistry) , resistive random access memory , electrochemistry , resistive touchscreen , redox , non volatile memory , engineering physics , optoelectronics , electrode , computer science , metallurgy , chemistry , philosophy , geometry , mathematics , organic chemistry , epistemology , engineering , computer vision
This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined..