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Organic Single‐Crystal Schottky Gate Transistors
Author(s) -
Kaji Toshihiko,
Takenobu Taishi,
Morpurgo Alberto F.,
Iwasa Yoshihiro
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200900276
Subject(s) - schottky diode , materials science , transistor , optoelectronics , organic semiconductor , band diagram , schottky barrier , semiconductor , nanotechnology , electrical engineering , band gap , engineering , diode , voltage
Schottky contacts and Schottky gate transistors on organic single crystals are successfully fabricated, and enable the complete understanding of the operating mechanism as well as a full description of the energy‐band diagram. This represents a considerable step forward in the understanding of organic semiconductors, and offers a viable route for organic‐device design.