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Ultrahigh‐Crystalline‐Quality Silicon Pillars Formed by Millimeter‐Wave Annealing of Amorphous Silicon on Glass
Author(s) -
Liu Fude,
Jones Kim M.,
Xu Yueqin,
Nemeth William,
Lohr John,
Neilson Jeff,
Romero Manuel J.,
AlJassim Mowafak M.,
Young David L.
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200900157
Subject(s) - materials science , silicon , amorphous silicon , millisecond , annealing (glass) , amorphous solid , chemical vapor deposition , nanocrystalline silicon , crystalline silicon , optoelectronics , silicon monoxide , millimeter , extremely high frequency , optics , composite material , crystallography , chemistry , physics , astronomy
Silicon pillars are formed by millisecond‐long, single‐pulse annealing of 110 GHz millimeter‐wave radiation incident upon intrinsic amorphous silicon (a‐Si) thin films deposited on glass by hot‐wire chemical vapor deposition. The image was taken at a sample tilt angle of 52° for a better 3D view.