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Inside Front Cover: Residual Layer Self‐Removal in Imprint Lithography (Adv. Mater. 7/2008)
Author(s) -
Dumond Jarrett,
Low Hong Yee
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200890022
Subject(s) - materials science , lithography , residual , layer (electronics) , nanotechnology , etching (microfabrication) , nanostructure , polymer , composite material , optoelectronics , algorithm , computer science
A new method for imprinting residual‐layer‐free polymer micro‐ and nanostructures, particularly 3D structures with overhangs, is demonstrated on p. 1291 by Jared Dumond and Hong Yee Low. This simple and versatile method induces self‐removal of the residual layer by its controlled failure along the edges of the imprinted features (AFM image, center). Pristine overhang structures are realized without exposure to plasma or chemical etching agents (SEM image, upper left).