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Patterned Graphene Electrodes from Solution‐Processed Graphite Oxide Films for Organic Field‐Effect Transistors
Author(s) -
Pang Shuping,
Tsao Hoi Nok,
Feng Xinliang,
Müllen Klaus
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200803812
Subject(s) - graphene , materials science , graphite , electrode , oxide , nanotechnology , field effect transistor , etching (microfabrication) , transistor , graphite oxide , optoelectronics , layer (electronics) , electrical engineering , composite material , metallurgy , voltage , chemistry , engineering
A replacement for gold as the hole‐injecting metal in organic electronic devices is presented: patterned graphene electrodes prepared from graphite oxide sheets by oxygen plasma etching. Solution‐processed organic FETs with poly(3‐hexylthiophene) as the semiconductor and these graphene electrodes are shown to perform as well as or even better than devices with gold contacts.