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Patterning of Solution‐Processed Semiconducting Polymers in High‐Mobility Thin‐Film Transistors by Physical Delamination
Author(s) -
Chang JuiFen,
Sirringhaus Henning
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200803794
Subject(s) - materials science , thin film transistor , thin film , transistor , polymer , optoelectronics , crosstalk , delamination (geology) , nanotechnology , composite material , layer (electronics) , electronic engineering , voltage , electrical engineering , paleontology , subduction , engineering , biology , tectonics
Patterning of high‐mobility semiconducting polymer thin films is essential to prevent undesirable crosstalk in realization of integrated circuits. We present here two simple selective physical delamination methods that allow clean and high‐resolution patterning of semiconducting polymers for thin‐film transistors, leading to a significant reduction in OFF current while retaining the high field‐effect mobilities of the unpatterned polymer films.