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Carbon‐Based Field‐Effect Transistors for Nanoelectronics
Author(s) -
Burghard Marko,
Klauk Hagen,
Kern Klaus
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200803582
Subject(s) - nanoelectronics , materials science , nanotechnology , field effect transistor , transistor , characterization (materials science) , nanoscopic scale , carbon fibers , curse of dimensionality , nanostructure , computer science , electrical engineering , engineering , voltage , composite number , machine learning , composite material
Abstract In this review, the suitability of the major types of carbon nanostructures as conducting channels of field‐effect transistors (FETs) is compared on the basis of the dimensionality and size of their π‐conjugated system. For each of these materials, recent progress in its synthesis, electrical and structural characterization, as well as its implementation into various gate configurations is surveyed, with emphasis laid onto nanoscale aspects of the FET design and the attainable device performance. Finally, promising future research directions, such as the integration of different carbon nanostructures into novel device architectures, are outlined.