Premium
Spatially Resolved Potential Distribution in Carbon Nanotube Cross‐Junction Devices
Author(s) -
Lee Eduardo J. H.,
Balasubramanian Kannan,
Burghard Marko,
Kern Klaus
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200803545
Subject(s) - materials science , carbon nanotube , nanotube , photocurrent , carbon nanotube field effect transistor , nanotechnology , heterojunction , optoelectronics , schottky barrier , schottky diode , semiconductor , carbon nanotube quantum dot , transistor , diode , field effect transistor , electrical engineering , voltage , engineering
Crossed‐nanotube junctions , the basic constituents of carbon nanotube networks, are investigated by scanning photocurrent microscopy. The location of the predominant electrostatic potential drop, at the electrical contacts or at the junction, is found to be highly dependent on the transport regime. Also, whereas Schottky barriers are formed at M‐S (metal–semiconductor) nanotube crossings, isotype heterojunctions are formed at S‐S ones (figure).