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Molecular Self‐Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin‐Film Transistor Applications
Author(s) -
DiBenedetto Sara A.,
Facchetti Antonio,
Ratner Mark A.,
Marks Tobin J.
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200803267
Subject(s) - materials science , thin film transistor , monolayer , dielectric , transistor , organic semiconductor , optoelectronics , gate dielectric , capacitance , nanotechnology , semiconductor , self assembled monolayer , organic electronics , leakage (economics) , fabrication , thin film , layer (electronics) , voltage , electrode , electrical engineering , chemistry , medicine , alternative medicine , engineering , macroeconomics , pathology , economics
Principal goals in organic thin‐film transistor (OTFT) gate dielectric research include achieving: (i) low gate leakage currents and good chemical/thermal stability, (ii) minimized interface trap state densities to maximize charge transport efficiency, (iii) compatibility with both p‐ and n‐ channel organic semiconductors, (iv) enhanced capacitance to lower OTFT operating voltages, and (v) efficient fabrication via solution‐phase processing methods. In this Review, we focus on a prominent class of alternative gate dielectric materials: self‐assembled monolayers (SAMs) and multilayers (SAMTs) of organic molecules having good insulating properties and large capacitance values, requisite properties for addressing these challenges. We first describe the formation and properties of SAMs on various surfaces (metals and oxides), followed by a discussion of fundamental factors governing charge transport through SAMs. The last section focuses on the roles that SAMs and SAMTs play in OTFTs, such as surface treatments, gate dielectrics, and finally as the semiconductor layer in ultra‐thin OTFTs.