Premium
Self‐Assembly of Ordered Semiconductor Nanoholes by Ion Beam Sputtering
Author(s) -
Wei Qiangmin,
Zhou Xiuli,
Joshi Bhuwan,
Chen Yanbin,
Li KunDar,
Wei Qihuo,
Sun Kai,
Wang Lumin
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200803258
Subject(s) - materials science , sputtering , semiconductor , substrate (aquarium) , ion , quantum dot , focused ion beam , ion beam , optoelectronics , beam (structure) , optics , thin film , nanotechnology , oceanography , physics , quantum mechanics , geology
Periodic nanohole arrays are formed on a Ge substrate by self‐assembly using focused ion beam sputtering at normal incidence with an energy of 5 keV. The figure shows an SEM image of a hexagonally ordered hole domain that has hexagonally ordered quantum dots—20 nm diameter and 3 nm height—around each hole The structured Ge has high surface area and a considerably blue‐shifted energy gap.