Self‐Assembly of Ordered Semiconductor Nanoholes by Ion Beam Sputtering | Zendy

Wei Qiangmin | Zendy; Zhou Xiuli | Zendy; Joshi Bhuwan | Zendy; Chen Yanbin | Zendy; Li KunDar | Zendy; Wei Qihuo | Zendy; Sun Kai | Zendy; Wang Lumin | Zendy

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Self‐Assembly of Ordered Semiconductor Nanoholes by Ion Beam Sputtering

Author(s) -

Wei Qiangmin,

Zhou Xiuli,

Joshi Bhuwan,

Chen Yanbin,

Li KunDar,

Wei Qihuo,

Sun Kai,

Wang Lumin

Publication year - 2009

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200803258

Subject(s) - materials science , sputtering , semiconductor , substrate (aquarium) , ion , quantum dot , focused ion beam , ion beam , optoelectronics , beam (structure) , optics , thin film , nanotechnology , oceanography , physics , quantum mechanics , geology

Periodic nanohole arrays are formed on a Ge substrate by self‐assembly using focused ion beam sputtering at normal incidence with an energy of 5 keV. The figure shows an SEM image of a hexagonally ordered hole domain that has hexagonally ordered quantum dots—20 nm diameter and 3 nm height—around each hole The structured Ge has high surface area and a considerably blue‐shifted energy gap.

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