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Electroluminescent Cu‐doped CdS Quantum Dots
Author(s) -
Stouwdam Jan W.,
Janssen René A. J.
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200803223
Subject(s) - quantum dot , electroluminescence , doping , dopant , materials science , optoelectronics , diode , light emitting diode , valence (chemistry) , quantum efficiency , valence band , nanotechnology , physics , band gap , quantum mechanics , layer (electronics)
Incorporating Cu‐doped CdS quantum dots into a polymer host produces efficient light‐emitting diodes. The Cu dopant creates a trap level that aligns with the valence band of the host, enabling the direct injection of holes into the quantum dots, which act as emitters. At low current densities, the luminance efficiency maximizes at 9 cd A −1 , providing an external quantum efficiency of 5%.