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Thin‐Film Transistors
Author(s) -
Street Robert A.
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200803211
Subject(s) - materials science , thin film transistor , polycrystalline silicon , nanotechnology , amorphous silicon , silicon , fabrication , transistor , thin film , semiconductor industry , semiconductor , integrated circuit , engineering physics , optoelectronics , electrical engineering , crystalline silicon , manufacturing engineering , engineering , layer (electronics) , medicine , alternative medicine , pathology , voltage
Thin‐film transistors (TFTs) matured later than silicon integrated circuits, but in the past 15 years the technology has grown into a huge industry based on display applications, with amorphous and polycrystalline silicon as the incumbent technology. Recently, an intense search has developed for new materials and new fabrication techniques that can improve the performance, lower manufacturing cost, and enable new functionality. There are now many new options – organic semiconductor (OSCs), metal oxides, nanowires, printing technology as well as thin‐film silicon materials with new properties. All of the new materials have something to offer but none is entirely without technical problems.