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High Electron Mobility and Ambient Stability in Solution‐Processed Perylene‐Based Organic Field‐Effect Transistors
Author(s) -
Piliego Claudia,
Jarzab Dorota,
Gigli Giuseppe,
Chen Zhihua,
Facchetti Antonio,
Loi Maria Antonietta
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200803207
Subject(s) - materials science , crystallinity , perylene , thermal stability , electron mobility , saturation (graph theory) , field effect transistor , optoelectronics , enhanced data rates for gsm evolution , kelvin probe force microscope , atomic force microscopy , transistor , chemical engineering , analytical chemistry (journal) , nanotechnology , optics , fluorescence , composite material , organic chemistry , voltage , mathematics , chemistry , computer science , engineering , telecommunications , quantum mechanics , physics , combinatorics
Bottom‐contact n‐channel OFETs based on spin‐coated films of N , N′ ‐1 H ,1 H ‐perfluorobutyl dicyanoperylenediimide (PDI‐FCN 2 ) exhibit a saturation‐regime mobility of 0.15 cm 2 V −1 s −1 in vacuum and good air stability. These performances are attributed to the high crystallinity and to the edge‐on orientation promoted by the thermal treatment, as showed by confocal laser microscopy.