Premium
Extended Lifetime of Organic Field‐Effect Transistors Encapsulated with Titanium Sub‐Oxide as an ‘Active’ Passivation/Barrier Layer
Author(s) -
Cho Shinuk,
Lee Kwanghee,
Heeger Alan J.
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200803013
Subject(s) - passivation , materials science , layer (electronics) , titanium , active layer , oxide , field effect transistor , titanium oxide , transistor , barrier layer , semiconductor , chemical engineering , nanotechnology , inorganic chemistry , optoelectronics , thin film transistor , metallurgy , chemistry , physics , voltage , quantum mechanics , engineering
A thin capping layer of titanium sub‐oxide (TiOx) prepared by sol–gel synthesis from titanium alkoxides extends the lifetime of organic FETs. The TiO x layer functions as an ‘active’ passivation/barrier layer that actually removes oxygen and water vapor from the organic semiconductor. The results demonstrate a significant improvement in the lifetime of organic field‐effect transistors when exposed to air.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom