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Extended Lifetime of Organic Field‐Effect Transistors Encapsulated with Titanium Sub‐Oxide as an ‘Active’ Passivation/Barrier Layer
Author(s) -
Cho Shinuk,
Lee Kwanghee,
Heeger Alan J.
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200803013
Subject(s) - passivation , materials science , layer (electronics) , titanium , active layer , oxide , field effect transistor , titanium oxide , transistor , barrier layer , semiconductor , chemical engineering , nanotechnology , inorganic chemistry , optoelectronics , thin film transistor , metallurgy , chemistry , physics , voltage , quantum mechanics , engineering
A thin capping layer of titanium sub‐oxide (TiOx) prepared by sol–gel synthesis from titanium alkoxides extends the lifetime of organic FETs. The TiO x layer functions as an ‘active’ passivation/barrier layer that actually removes oxygen and water vapor from the organic semiconductor. The results demonstrate a significant improvement in the lifetime of organic field‐effect transistors when exposed to air.