Premium
Improvements in Stability and Performance of N,N′ ‐Dialkyl Perylene Diimide‐Based n‐Type Thin‐Film Transistors
Author(s) -
Wen Yugeng,
Liu Yunqi,
Di Chongan,
Wang Ying,
Sun Xiangnan,
Guo Yunlong,
Zheng Jian,
Wu Weiping,
Ye Shanghui,
Yu Gui
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200802934
Subject(s) - perylene , diimide , materials science , thin film transistor , electrode , thin film , transistor , grain boundary , optoelectronics , chemical engineering , nanotechnology , composite material , organic chemistry , molecule , chemistry , layer (electronics) , electrical engineering , engineering , voltage , microstructure
The stability and performance of N,N′ ‐dioctyl perylene diimide (PDI‐C8) and N,N′ ‐ditridecyl perylene diimide (PDI‐C13) thin‐film transistors (TFTs) are increased using optimized growth rates and sulfur‐modified top‐contact electrodes. Changing the grain size and the depth of grain boundaries by controlling film growth rate is another way of increasing the air stability of perylene diimides without electron‐withdrawing groups.