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Ultralow‐Threshold Laser Realized in Zinc Oxide
Author(s) -
Zhu Hai,
Shan ChongXin,
Yao Bin,
Li BingHui,
Zhang JiYing,
Zhang ZhengZhong,
Zhao DongXu,
Shen DeZhen,
Fan XiWu,
Lu YouMing,
Tang ZiKang
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200802907
Subject(s) - lasing threshold , materials science , layer (electronics) , optoelectronics , heterojunction , zinc , laser , oxide , nanotechnology , optics , metallurgy , wavelength , physics
Lasing action is realized in a ZnO/GaN heterojunction by employing a MgO interlayer. The MgO layer can confine electrons in the ZnO layer, while holes can pass through the MgO layer and enter into the n‐ZnO layer from the p‐GaN layer. The threshold of the lasing action is as low as 0.8 mA..