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Charge‐Transport Anisotropy Due to Grain Boundaries in Directionally Crystallized Thin Films of Regioregular Poly(3‐hexylthiophene)
Author(s) -
Jimison Leslie H.,
Toney Michael F.,
McCulloch Iain,
Heeney Martin,
Salleo Alberto
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200802722
Subject(s) - materials science , grain boundary , crystallite , crystallization , anisotropy , charge (physics) , fiber , condensed matter physics , composite material , charge carrier , thin film , chemical physics , nanotechnology , optoelectronics , chemical engineering , microstructure , optics , metallurgy , physics , quantum mechanics , engineering
P3HT films that are highly anisotropic in‐plane are produced using a directional crystallization technique, and the charge‐transport properties of grain bourdaries between different orientations of crystallites are studied. Boundaries along the fiber provide a small barrier to charge transport when compared to fiber‐to‐fiber grain boundaries. The films allow a correlation to be drawn between the grain‐boundary type and charge‐transport behavior in P3HT.