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Fabrication of a High‐Brightness Blue‐Light‐Emitting Diode Using a ZnO‐Nanowire Array Grown on p‐GaN Thin Film
Author(s) -
Zhang XiaoMei,
Lu MingYen,
Zhang Yue,
Chen LihJ.,
Wang Zhong Lin
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200802686
Subject(s) - materials science , optoelectronics , electroluminescence , heterojunction , nanowire , wafer , light emitting diode , diode , fabrication , nanotechnology , layer (electronics) , medicine , alternative medicine , pathology
Bright n‐ZnO nanowire/p‐GaN film hybrid heterojunction light‐emitting‐diode (LED) devices are fabricated by directly growing n‐type ZnO‐nanowire arrays on p‐GaN wafers. UV–blue electroluminescence emission was observed from the heterojunction diodes, and the heterojunction LED device exhibited a high sensitivity in responding to UV irradiation.