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Efficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumns
Author(s) -
Yu Peichen,
Chang ChiaHua,
Chiu ChingHua,
Yang ChinSheng,
Yu JueChin,
Kuo HaoChung,
Hsu ShihHsin,
Chang YiaChung
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200802563
Subject(s) - anti reflective coating , materials science , indium tin oxide , photovoltaics , optoelectronics , transparent conducting film , layer (electronics) , indium , photovoltaic system , refractive index , tin oxide , oxide , solar cell , nanotechnology , doping , biology , ecology , metallurgy
Highly‐oriented indium tin oxide nanocolumns are prepared by glancing‐angle deposition with nitrogen. The tapered column profiles, which function as a graded‐refractive‐index layer, offer superior antireflective characteristics. The nanostructured material serves as the conductive antireflective layer for GaAs solar cells, demonstrating a viable efficiency‐boosting strategy for next‐generation photovoltaics.