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Nanowire‐Templated Lateral Epitaxial Growth of Low‐Dislocation Density Nonpolar a ‐Plane GaN on r ‐Plane Sapphire
Author(s) -
Li Qiming,
Lin Yong,
Creighton J. Randall,
Figiel Jeffrey J.,
Wang George T.
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200802532
Subject(s) - materials science , nanowire , sapphire , epitaxy , coalescence (physics) , dislocation , optoelectronics , lattice (music) , gallium nitride , nanotechnology , condensed matter physics , composite material , optics , layer (electronics) , laser , physics , astrobiology , acoustics
Coalescence of a vertically aligned GaN nanowire array on r ‐plane sapphire, a technique called nanowire‐templated lateral epitaxial growth, is used to grow low‐dislocation density a ‐plane GaN. The resulting film is connected to the lattice‐mismatched substrate by nanowires, which facilitates dramatic strain relaxation and leads to a significant reduction in defects.