Nanowire‐Templated Lateral Epitaxial Growth of Low‐Dislocation Density Nonpolar  a ‐Plane GaN on  r ‐Plane Sapphire | Zendy

Li Qiming | Zendy; Lin Yong | Zendy; Creighton J. Randall | Zendy; Figiel Jeffrey J. | Zendy; Wang George T. | Zendy

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Nanowire‐Templated Lateral Epitaxial Growth of Low‐Dislocation Density Nonpolar a ‐Plane GaN on r ‐Plane Sapphire

Author(s) -

Li Qiming,

Lin Yong,

Creighton J. Randall,

Figiel Jeffrey J.,

Wang George T.

Publication year - 2009

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200802532

Subject(s) - materials science , nanowire , sapphire , epitaxy , coalescence (physics) , dislocation , optoelectronics , lattice (music) , gallium nitride , nanotechnology , condensed matter physics , composite material , optics , layer (electronics) , laser , physics , astrobiology , acoustics

Coalescence of a vertically aligned GaN nanowire array on r ‐plane sapphire, a technique called nanowire‐templated lateral epitaxial growth, is used to grow low‐dislocation density a ‐plane GaN. The resulting film is connected to the lattice‐mismatched substrate by nanowires, which facilitates dramatic strain relaxation and leads to a significant reduction in defects.

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