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Nanodiamond Photoemitters Based on Strong Narrow‐Band Luminescence from Silicon‐Vacancy Defects
Author(s) -
Vlasov Igor I.,
Barnard Amanda S.,
Ralchenko Victor G.,
Lebedev Oleg I.,
Kanzyuba Mikhail V.,
Saveliev Alexey V.,
Konov Vitaly I.,
Goovaerts Etienne
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200802160
Subject(s) - nanodiamond , materials science , vacancy defect , luminescence , silicon , optoelectronics , wavelength , nanotechnology , photon , diamond , optics , condensed matter physics , metallurgy , physics
The formation and thermodynamic stability of silicon‐vacancy (Si‐V) color centers, intensively emitting at a wavelength of 738 nm, are demonstrated for the first time in nanodiamonds less than 10 nm in size. These findings open prospects for the production of stable and efficient optical nanoemitters (single‐photon emitters) based on nanodiamond.