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Grain Orientation Mapping of Polycrystalline Organic Semiconductor Films by Transverse Shear Microscopy
Author(s) -
Kalihari Vivek,
Tadmor E. B.,
Haugstad Greg,
Frisbie C. Daniel
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200801834
Subject(s) - materials science , crystallite , transverse plane , orientation (vector space) , microscopy , grain size , semiconductor , optical microscope , crystallography , optoelectronics , composite material , optics , scanning electron microscope , metallurgy , physics , geometry , chemistry , mathematics , structural engineering , engineering
A scanning probe technique, termed transverse shear microscopy , produces striking images of grain size, shape, and crystallographic orientation in ultrathin layers of polycrystalline organic semiconductors. The key feature of this novel technique is its ability to generate Grain Orientation Maps that facilitate quantitative analysis of grain alignment and the angular distribution of GBs.