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Surface Potential Imaging of Solution Processable Acene‐Based Thin Film Transistors
Author(s) -
Teague Lucile C.,
Hamadani Behrang H.,
Jurchescu Oana D.,
Subramanian Sankar,
Anthony John E.,
Jackson Thomas N.,
Richter Curt A.,
Gundlach David J.,
Kushmerick James G.
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200801780
Subject(s) - materials science , acene , microstructure , thin film transistor , kelvin probe force microscope , thin film , transistor , optoelectronics , nanotechnology , atomic force microscopy , composite material , layer (electronics) , molecule , voltage , chemistry , physics , organic chemistry , quantum mechanics
Scanning Kelvin probe microscopy (SKPM) of functioning solution processed thin film transistors is used to correlate film microstructure with device performance. As the channel length increases in these spun–cast devices, significant changes occur in the film microstructure within the device channel. These changes are observed with SKPM, and show a strong structure–function relationship.

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