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Downscaling of Organic Field‐Effect Transistors with a Polyelectrolyte Gate Insulator
Author(s) -
Herlogsson Lars,
Noh YongYoung,
Zhao Ni,
Crispin Xavier,
Sirringhaus Henning,
Berggren Magnus
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200801756
Subject(s) - materials science , optoelectronics , insulator (electricity) , electric field , field effect transistor , transistor , polyelectrolyte , organic semiconductor , electrolyte , micrometer , field effect , organic electronics , semiconductor , mosfet , nanotechnology , organic field effect transistor , voltage , electrode , electrical engineering , polymer , optics , composite material , engineering , chemistry , physics , quantum mechanics
A polyelectrolyte is used as gate insulator material in organic field‐effect transistors with self‐aligned inkjet printed sub–micrometer channels. The small separation of the charges in the electric double layer at the electrolyte‐semiconductor interface, which builds up in tens of microseconds, provides a very high transverse electric field in the channel that effectively suppresses short‐channel effects at low applied gate voltages.