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Spatially Localized Photoluminescence at 1.5 Micrometers Wavelength in Direct Laser Written Optical Nanostructures
Author(s) -
Wong Sean,
Kiowski Oliver,
Kappes Manfred,
Lindner Jörg K. N.,
Mandal Nirajan,
Peiris Frank C.,
Ozin Geoffrey A.,
Thiel Michael,
Braun Markus,
Wegener Martin,
von Freymann Georg
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200801508
Subject(s) - photoluminescence , materials science , refractive index , wavelength , photoresist , laser , nanostructure , photonics , optoelectronics , erbium , optics , nanotechnology , doping , physics , layer (electronics)
A 3D direct laser writing (3D DLW) compatible photoresist , consisting of erbium‐doped arsenic trisulfide (Er:As 2 S 3 ) has been developed. This photoresist simultaneously possess a refractive index ( n ) of 2.45 and photoluminescence at 1.5 μm wavelength that is also spatially localizable. This enables 3D DLW to produce high‐refractive index photonic structures with spatially selective optical activity without the need for post‐processing steps.