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Molecular Storage Elements for Proton Memory Devices
Author(s) -
Kapetanakis Eleftherios,
Douvas Antonios M.,
Velessiotis Dimitris,
Makarona Eleni,
Argitis Panagiotis,
Glezos Nikos,
Normand Pascal
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200801104
Subject(s) - materials science , proton , trapping , dissociation (chemistry) , electrode , ion , voltage , layer (electronics) , molecule , nanotechnology , optoelectronics , chemistry , physics , organic chemistry , nuclear physics , biology , quantum mechanics , ecology
Non‐volatile information storage using a molecular element comprising a proton‐conducting polymeric layer (PCL) and a proton‐trapping layer (PTL) is presented (see figure). Application of a positive voltage (write operation) to the top ion‐blocking electrode (IBE) allows dissociation of neutral (n) molecules into anions (−) and protons (+), motion and trapping (storage) of protons in the PTL. A negative voltage (erase operation) moves back the trapped protons to the anions.