Molecular Storage Elements for Proton Memory Devices | Zendy

Kapetanakis Eleftherios | Zendy; Douvas Antonios M. | Zendy; Velessiotis Dimitris | Zendy; Makarona Eleni | Zendy; Argitis Panagiotis | Zendy; Glezos Nikos | Zendy; Normand Pascal | Zendy

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Molecular Storage Elements for Proton Memory Devices

Author(s) -

Kapetanakis Eleftherios,

Douvas Antonios M.,

Velessiotis Dimitris,

Makarona Eleni,

Argitis Panagiotis,

Glezos Nikos,

Normand Pascal

Publication year - 2008

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200801104

Subject(s) - materials science , proton , trapping , dissociation (chemistry) , electrode , ion , voltage , layer (electronics) , molecule , nanotechnology , optoelectronics , chemistry , physics , organic chemistry , nuclear physics , biology , quantum mechanics , ecology

Non‐volatile information storage using a molecular element comprising a proton‐conducting polymeric layer (PCL) and a proton‐trapping layer (PTL) is presented (see figure). Application of a positive voltage (write operation) to the top ion‐blocking electrode (IBE) allows dissociation of neutral (n) molecules into anions (−) and protons (+), motion and trapping (storage) of protons in the PTL. A negative voltage (erase operation) moves back the trapped protons to the anions.

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