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Dense Self‐Assembly on Sparse Chemical Patterns: Rectifying and Multiplying Lithographic Patterns Using Block Copolymers
Author(s) -
Cheng Joy Y.,
Rettner Charles T.,
Sanders Daniel P.,
Kim HoCheol,
Hinsberg William D.
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200800826
Subject(s) - resist , lithography , materials science , photoresist , copolymer , self assembly , polymer , nanotechnology , photolithography , block (permutation group theory) , optoelectronics , composite material , layer (electronics) , geometry , mathematics
A lithography‐friendly self‐assembly process which multiplies and rectifies an existing resist patterns is demonstrated here. A polymer film (right figure) has assembled at a 14 nm half‐pitch on a thin resist pattern at twice the period (left figure). This directed self‐assembly process dramatically heals defects and reduces feature size variation of the ill‐defined resist patterns.