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Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin Films
Author(s) -
Jang Ho Won,
Ortiz Daniel,
Baek SeungHyub,
Folkman Chad M.,
Das Rasmi R.,
Shafer Padraic,
Chen Yanbin,
Nelson Christofer T.,
Pan Xiaoqing,
Ramesh Ramamoorthy,
Eom ChangBeom
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200800823
Subject(s) - materials science , ferroelectricity , epitaxy , thin film , substrate (aquarium) , anisotropy , multiferroics , optoelectronics , nanotechnology , condensed matter physics , optics , oceanography , physics , layer (electronics) , geology , dielectric
Two‐variant stripe domains in BiFeO 3 films on miscut (001) SrTiO 3 substrates exhibit square‐like, complete ferroelectric switching with low leakage current. Both the preferential distortion of BiFeO 3 unit cells and the persistent step‐flow growth induced by the substrate anisotropy are the origins of the formation of the two‐variant stripe domains in (001) BiFeO 3 films.